t ransistor output these devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector , in a surface mountable, s m all outline, plas tic pac k age. they are ideally suited for high dens ity applications, and eliminate the need for through ? the ? board mounting. ? convenient plastic soic ? 8 surface mountable package style ? closely matched current t ransfer ratios ? minimum v (br)ceo of 70 v olts guaranteed ? standard soic ? 8 footprint, with 0.050 2 lead spacing ? compatible with dual w ave, v apor phase and ir reflow soldering ? high input ? output isolation of 3000 v ac (rms) guaranteed ? ul recognized file #e 90 700 , v ol um e 2 ordering information: ? t o obtain moc205, 206, 207, 208 in t ape and reel, add r2 su f fix to device numbers: r2 = 2500 units on 13 2 reel ? t o obtain moc205, 206, 207, 208 in quantities of 50 (shipped in sleeves) ? no su f fix marking information: ? moc205 = 205 ? moc206 = 206 ? moc207 = 207 ? moc208 = 208 applications: ? feedback control circuits ? interfacing and coupling systems of di f ferent potentials and impedances ? general purpose switching circuits ? monitor and detection circuits maximum ra tings (t a = 25 c unless otherwise noted) rating symbol v alue unit input led forward current ? continuous i f 60 ma forward current ? peak (pw = 100 m s, 120 pps) i f (pk) 1.0 a reverse v oltage v r 6.0 v led power dissipation @ t a = 25 c derate above 25 c p d 90 0.8 mw mw/ c output transist or collector ? emitter v oltage v ceo 70 v collector ? base v oltage v cbo 70 v emitter ? collector v oltage v eco 7.0 v collector current ? continuous i c 150 ma detector power dissipation @ t a = 25 c derate above 25 c p d 150 1.76 mw mw/ c small outline opt oisola t ors transist or output schema tic 1. led anode 2. led ca thode 3. no connection 4. no connection 5. emitter 6. collect or 7. base 8. no connection 1 2 3 8 6 5 4 7
maximum ratings e continued (t a = 25 c unless otherwise noted) rating symbol value unit total device inputoutput isolation voltage (1,2) (60 hz, 1.0 sec. duration) v iso 3000 vac(rms) total device power dissipation @ t a = 25 c derate above 25 c p d 250 2.94 mw mw/ c ambient operating temperature range (3) t a 45 to +100 c storage temperature range (3) t stg 45 to +125 c lead soldering temperature (1/16 from case, 10 sec. duration) e 260 c electrical characteristics (t a = 25 c unless otherwise noted) (4) characteristic symbol min typ (4) max unit input led forward voltage (i f = 10 ma) v f e 1.15 1.5 v reverse leakage current (v r = 6.0 v) i r e 0.1 100 a capacitance c e 18 e pf output transistor collectoremitter dark current (v ce = 10 v, t a = 25 c) i ceo 1 e 1.0 50 na (v ce = 10 v, t a = 100 c) i ceo 2 e 1.0 e m a collectoremitter breakdown voltage (i c = 100 m a) v (br)ceo 70 120 e v emittercollector breakdown voltage (i e = 100 m a) v (br)eco 7.0 7.8 e v collectoremitter capacitance (f = 1.0 mhz, v ce = 0) c ce e 7.0 e pf coupled output collector current moc205 (i f = 10 ma, v ce = 10 v) moc206 moc207 moc208 i c (ctr) (5) 4.0 (40) 6.3 (63) 10 (100) 4.0 (40) 6.0 (60) 9.4 (94) 15 (150) 8.0 (80) 8.0 (80) 12.5 (125) 20 (200) 12.5 (125) ma (%) collectoremitter saturation voltage (i c = 2.0 ma, i f = 10 ma) v ce(sat) e 0.15 0.4 v turnon time (i c = 2.0 ma, v cc = 10 v, r l = 100 w ) t on e 3.0 e m s turnoff time (i c = 2.0 ma, v cc = 10 v, r l = 100 w ) t off e 2.8 e m s rise time (i c = 2.0 ma, v cc = 10 v, r l = 100 w ) t r e 1.6 e m s fall time (i c = 2.0 ma, v cc = 10 v, r l = 100 w ) t f e 2.2 e m s inputoutput isolation voltage (f = 60 hz, t = 1.0 sec.) (1,2) v iso 3000 e e vac(rms) isolation resistance (v io = 500 v) (2) r iso 10 11 e e w isolation capacitance (v io = 0, f = 1.0 mhz) (2) c iso e 0.2 e pf 1. inputoutput isolation voltage, v iso , is an internal device dielectric breakdown rating. 2. for this test, pins 1 and 2 are common, and pins 5, 6 and 7 are common. 3. refer to quality and reliability section in opto data book for information on test conditions. 4. always design to the specified minimum/maximum electrical limits (where applicable). 5. current transfer ratio (ctr) = i c /i f x 100%. mo c205, moc206, moc207, moc208
typical characteristics c i f , led input current (ma) 5020105210.5 0.1 1 10 figure 1. led forward voltage versus forward current i f , led forward current (ma) 101 2 1000100 1 1.2 1.4 1.6 1.8 figure 2. output current versus input current v f , forward voltage (volts) i , output collector current (normalized) pulse only pulse or dc t a = 45 c 25 c 100 c normalized to: i f = 10 ma 0.01 1001010.10.01 20 t a , ambient temperature ( c) 100 80 0 20 40 10 3 60 t a , ambient temperature ( c) 120100806040200204060 0.1 1 10 figure 3. output current versus collectoremitter voltage v ce , collectoremitter voltage (volts) 1098 01 2 3 4 5 6 16 7 10 1 10 0 10 1 10 2 0 2 4 6 8 10 12 14 18 16 14 12 10 8 6 4 v, voltage (volts) 2 i c , output collector current (ma) i c , output collector current (normalized ) i ceo , collectoremitter dark current (normalized) c, capacitance (pf) figure 4. output current versus ambient temperature figure 5. dark current versus ambient temperature figure 6. capacitance versus voltage normalized to: t a = 25 c i f = 10 ma moc206 moc205 moc207 normalized to: v ce = 10 v t a = 25 c v ce = 70 v 30 v 10 v c led c ce f = 1 mhz mo c205, moc206, moc207, moc208
style 1: pin 1. anode 2. cathode 3. nc 4. nc 5. emitter 6. collector 7. base 8. nc dim a min max min max millimeters 0.182 0.202 4.63 5.13 inches b 0.144 0.164 3.66 4.16 c 0.123 0.143 3.13 3.63 d 0.011 0.021 0.28 0.53 g 0.050 bsc 1.27 bsc h 0.003 0.008 0.08 0.20 j 0.006 0.010 0.16 0.25 k 0.224 0.244 5.69 6.19 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b k d g 8 pl 0.13 (0.005) m ta m j h c seating plane 0.038 (0.0015) 1 85 4 a t mo c2 05 , m o c 2 06 , m oc 20 7, mo c 2 0 8
life support policy fairchilds products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. www.fairchildsemi.com ? 2000 fairchild semiconductor corporation
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